Monte Carlo simulation of electron transport in wurtzite aluminum nitride

Solid State Communications

Volumn 105, Issue 10, 1998, Pages 621-626

  O'Leary, Stephen K ^a   Foutz, Brian E ^b   Shur, Michael S ^a   Bhapkar, Udayan V ^c   Eastman, Lester F ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Cornell University   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

A. semiconductors; D. electronic transport

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PIEZOELECTRIC CONSTANT; PIEZOELECTRIC SCATTERING; WURTZITE ALUMINUM NITRIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032019202     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10207-1     Document Type: Article

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