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Volumn 49, Issue 4, 2006, Pages 407-414

Electron mobility in a modulation doped AlGaN/GaN quantum well

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; PARAMETER ESTIMATION; PHASE MODULATION; SURFACE ROUGHNESS;

EID: 33645522113     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2006-00092-2     Document Type: Article
Times cited : (5)

References (53)
  • 33
    • 33645510526 scopus 로고    scopus 로고
    • http://nina.ecse.rpi.edu/shur/nitride.htm#Lei
  • 40
    • 33645499773 scopus 로고    scopus 로고
    • Quantum wells
    • Jonh-Wiley Sons. Ltd., England
    • P. Harrison, Quantum Wells, Wires and Dots (Jonh-Wiley Sons. Ltd., England, 2000)
    • (2000) Wires and Dots
    • Harrison, P.1
  • 50
    • 33645506408 scopus 로고    scopus 로고
    • http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/basic.html


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.