Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1185-1193

  Kilchytska, V ^a   Collaert, N ^b   Jurczak, M ^b   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b IMEC   (Belgium)

Author keywords

FinFETs; High temperature; Multiple gate MOSFETs; Subthreshold slope; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; HIGH TEMPERATURE EFFECTS; MEASUREMENT THEORY; SILICON; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

LINEAR TEMPERATURE DEPENDENCE; SUBTHRESHOLD SLOPE;

MOSFET DEVICES;

EID: 34548539482     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.020     Document Type: Article

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