Nanoscale FinFETs for low power applications

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1819-1823

  Rosner W ^a   Landgraf, E ^a   Kretz, J ^a   Dreeskornfeld, L ^a   Schafer H ^a   Stadele M ^a   Schulz, T ^a   Hofmann, F ^a   Luyken, R J ^a   Specht, M ^a   Hartwich, J ^a   Pamler, W ^a   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Double gate; FinFET; Low power; MOSFET

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; HOLE MOBILITY; LEAKAGE CURRENTS; PLASMA ETCHING; SEMICONDUCTOR DOPING; SILICON WAFERS;

DOUBLE GATE; FINFET DEVICES; GATE INDUCED DRAIN LEAKAGE (GIDL); LOW POWER;

MOSFET DEVICES;

EID: 3142730186     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.019     Document Type: Conference Paper

References (10)

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