Implementation and characterization of the double-gate MOSFET using lateral solid-phase epitaxy

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1552-1555

  Liu, Haitao ^a   Xiong, Zhibin ^a   Sin, Johnny K O ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Double gate MOSFET; Lateral solid phase epitaxy; SOI

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; TRANSISTORS;

LATERAL SOLID-PHASE EPITAXY (LSPE);

MOSFET DEVICES;

EID: 0042164579     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813332     Document Type: Article

References (11)

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