Subthreshold characteristics of p-type triple-gate MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 123-126

  Lemme, M ^a   Mollenhauer, T ^a   Henschel, W ^a   Wahlbrink, T ^a   Gottlob, H ^a   Efavi, J ^a   Baus, M ^b   Winkler, O ^b   Spangenberg, B ^b   Kurz, H ^a  

^a AMO GMBH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

P-TYPE; SUBTHRESHOLD CHARACTERISTICS; TRIPLE-GATE MOSFETS;

EID: 84907697695     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256826     Document Type: Conference Paper

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