Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [112̄0]- and [0001]-oriented silicon carbide substrates

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 285-296

  Bishop, S M ^a   Reynolds Jr , C L ^a   Liliental Weber, Z ^b   Uprety, Y ^b   Zhu, J ^c   Wang, D ^c   Park, M ^c   Molstad, J C ^d,e,f   Barnhardt, D E ^g   Shrivastava, A ^g   Sudarshan, T S ^g   Davis, R F ^h  

^a North Carolina State University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d Maxion Technology   (United States)

^e U S ARMY RESEARCH LABORATORY   (United States)

^f Global Technologies Inc   (United States)

^g The Department of Mechanical Engineering   (United States)

^h CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Atomic force microscopy (AFM); Cathodoluminescence (CL); Chemical vapor deposition (CVD); Polytype replication; Raman spectroscopy; Silicon carbide (SiC); Transmission electron microscopy (TEM); X ray diffraction (XRD)

Indexed keywords

FILM-SUBSTRATE; POLYTYPE REPLICATION;

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; EPITAXIAL GROWTH; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

THIN FILMS;

EID: 34249106859     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0076-2     Document Type: Conference Paper

References (66)

1. J.J. Sumakeris, J.R. Jenny, and A.R. Powell, MRS Bull. 30, 280 (2005).
2. www.cree.com (referenced July 2006).
3. R. Singh, Microelectron. Reliab. 46, 713 (2006).
4. J. Takahashi and N. Ohtani, Phys. Status Solidi B 202, 163 (1997).
5. S.M. Bishop, et al., Mater. Res. Soc. Symp. Proc. 815, J5251 (2004).
6. T. Kimoto, T. Yamamoto, Z.Y. Chen, H. Yano, and H. Matsunami, Mater. Sci. Forum 338-342, 189 (2000).
7. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara, IEEE Electron. Dev. Lett. 20, 611 (1999).
8. J.J. Sumakeris, M. Das, H.M. Hobgood, S.G, Müller, M.J. Paisley, S. Ha, M, Skowronski, J.W. Palmour, and C.H. Cartar Jr., Mater. Sci. Forum 457-460, 1113 (2004).
9. M.K. Das, J.J. Sumakeris, M.J. Paisley, and A. Powell, Mater. Sci. Forum 457-460, 1105 (2004).
10. H. Matsunami and T. Kimoto, Mater. Sci. Eng. R20, 125 (1997).
11. K. Shibahara, N. Kuroda, S, Nishino, and H. Matsunami, Jpn. J. Appl. Phys. 26, L1815 (1987).
12. H.S. Kong, J.T. Glass, and R.F. Davis, J. Appl. Phys. 64, 2672 (1988).
13. J.A. Powell, D.J. Larkin, L.G. Matus, W.J. Choyke, J.L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz, Appl. Phys. Lett. 56, 1442 (1990).
14. T. Kimoto, H. Nishino, W.S. Yoo, and H. Matsunami, J. Appl. Phys. 73, 726 (1993).
15. C. Hallin, Ph.D. Dissertation, Linkoping University, Linkoping, SE (1996).
16. J.A. Powell and D.J. Larkin, Phys. Status Solidi B 202, 529 (1997).
17. T. Kimoto, Z.Y. Chen, S. Tamura, S. Nakamura, N. Onojima, and H. Matsunami, Jpn. J. Appl. Phys. 40, 3315 (2001).
18. J. Takahashi, N. Ohtani, M, Katsuno, and S. Shinoyama, J. Cryst. Growth 181, 229 (1997).
19. A. Yamashita, W.S. Yoo, T. Kimoto, and H. Matsunami, Jpn. J. Appl. Phys. 29, L343 (1990).
20. A.A. Burk Jr., et al., Inst. Phys. Conf. Ser. 137, 29 (1993).
21. C. Blanc, C. Sartel, V. Souliere, S. Juillaguet, Y. Monteil, and J. Camassel, Mater. Sci. Forum 457-460, 237 (2004).
22. J.A. Powell and H.A. Will, J. Appl. Phys. 44, 5177 (1973).
23. J.K. Jeong, C.S. Hwang, and H.J. Kim, J. Electrochem. Soc. 149, G526 (2002).
24. H. Tsuchida, I. Kamata, T. Jikimoto, and K. Izumi, J. Cryst. Growth 237-239, 1206 (2002).
25. http://www.gel.usherbrooke.ca/casino/
26. M. Dudley, X. Huang, W.M. Vetter, and P.G. Neudeck, Mater. Sci. Forum 433-436, 247 (2003).
27. X. Huang, M. Dudley, P.G. Neudeck, and J.A. Powell, Mater. Res. Soc. Symp. Proc. 742, K381 (2003).
28. X. Huang, M. Dudley, and R.S. Okojie, Mater. Res. Soc. Symp. Proc. 815, J731 (2004).
29. H.S. Kong, B.L. Jiang, J.T. Glass, G.A. Rozgonyi, and K.L. More, J. Appl. Phys. 63, 2645 (1988).
30. J. Kräußlich, A. Bauer, B. Wunderlich, and K. Goetz, Mater. Sci. Forum 353-356, 319 (2001).
31. B.K. Tanner and D.K, Bowen, J. Cryst. Growth 126, 1 (1993).
32. B.D, Cullity and S.R, Stock, Elements of X-ray Diffraction (Englewood Cliffs, NJ, Prentice Hall, 2001).
33. K. Järrendahl and R.F. Davis, SiC Materials and Devices, Vol. 52 In: Y.S. Park (ed). (San Diego, CA: Academic Press, 1998), pp. 1-20.
34. Y. Goldberg, M. Levinshtein, and S. Rumyantsev, Properties of Advanced Semiconductor Materials. In: M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur (eds). (New York: Wiley Interscience, 2001), pp. 93-147.
35. A. Suzuki, H. Matsunami, and T. Tanaka, Phys. Status Solidi A 13, 265 (1976).
36. A. Kakanakova-Georgieva, R. Yakimova, M. Syväjärvi, and E. Janzén, Appl. Surf. Sci. 184, 242 (2001).
37. A. Kakanakova-Georgieva, R. Yakimova, A, Henry, M.K. Linnarsson, M. Syväjärvi, and E. Janzén, J. Appl. Phys. 91, 2890 (2002).
38. D.W. Feldman, J.H. Parker Jr., W.J, Choyke, and L. Patrick, Phys. Rev. 173, 787 (1968).
39. M. Hofmann, A. Zywietz, K. Karch, and F. Bechstedt, Phys. Rev. 50, 13401 (1994).
40. J.C. Burton, L. Sun, M. Pophristic, S.J. Lukacs, F.H. Long, Z.C. Feng, and I.T. Ferguson, J. Appl. Phys. 84, 6268 (1998).
41. I. G. Ivanov, A. Henry, C. Hallin, T. Egilsson, and E. Janzén, Mater. Sci. Forum 264-268, 469 (1998).
42. J.C. Burton, L. Sun, F.H. Long, Z.C. Feng, and I.T. Ferguson, Phys. Rev. B 59, 7282 (1999).
43. H. Harima, Microelectron. Eng. 83, 126 (2006).
44. H. Harima, S.-I. Nakashima, and T. Uemura, J. Appl. Phys. 78, 1996 (1995).
45. J.C. Burton, L, Sun, M. Pophristic, S.J. Lukacs, F.H. Long, Z.C. Feng, and I.T. Ferguson, J. Appl. Phys. 84, 6268 (1998).
46. S. Nakashima, T. Mitani, J. Senzaki, H. Okumura, and T. Yamamoto, J. Appl. Phys. 97, 123507 (2005).
47. N.W. Jepps and T.F. Page, Progress in Crystal Growth and Characterization, Vol. 7. In: P. Krishna (eds). (New York: Pergamon Press, 1983), pp. 259-307.
48. Z.Y. Chen, T. Kimoto, and H, Matsunami, Jpn. J. Appl. Phys. 38, L1375 (1999).
49. A.A. Burk Jr. and L.B. Rowland, J. Cryst. Growth 167, 586 (1996).
50. T. Kimoto, A. Itoh, and H. Matsunami, Appl. Phys. Lett. 66, 3645 (1995).
51. T. Kimoto, A. Itoh, H. Matsunami, and T. Okano, J. Appl. Phys. 81, 3494 (1997).
52. M. Syväjärvi, R. Yakimova, and E. Janzén, J. Cryst. Growth 236, 297 (2002).
53. A.J. Steckl, M.D. Roth, J.A. Powell, and D.J. Larkin, Appl. Phys. Lett. 62, 2545 (1993).
54. H.-J. Rost, M Schmidbauer, D, Siehe, and R. Fornari, J. Cryst. Growth 290, 137 (2006).
55. T. Ueda, H. Nishino, and H. Matsunami, J. Cryst. Growth 104, 695 (1990).
56. T. Kimoto and H. Matsunami, J. Appl. Phys. 76, 7322 (1994).
57. Y. Chen, T. Kimoto, Y. Takeuchi, and H. Matsunami, J. Cryst. Growth 254, 115 (2003).
58. A.M. Roskowski, E.A. Preble, S. Einfeldt, P.Q. Miraglia, and R.F. Davis, IEEE J. Quant. Electron. 38, 1006 (2002).
59. B.P Wagner, Z.J. Reitmeier, J.S. Park, D.A. Batchelor, D.N. Zakharov, Z. Liliental-Weber, and R.F. Davis, J. Cryst. Growth 290, 504 (2006).
60. S.M. Bishop, J.-S. Park, J. Gu, B.P. Wagner, Z.J. Reitmeier, D.A. Batchelor, D.N. Zakharov, Z. Liliental-Weber, R.F. Davis (Paper presented at Conf. Proc. 1st Int. Symp. on Growth of III-Nitrides, Linköping, Sweden, June 4-7, 2006). J. Cryst. Growth 300, 83 (2007).
61. S. Soubatch, W.Y. Lee, M. Hetzel, C. Virojanadara, C. Coletti, S.E. Saddow, and U. Starke, Mater. Res. Soc. Symp. Proc. 911, 0911-B07-01 (2006).
62. C.S. Chang, I.S.T. Tsong, Y.C. Wang, and R.F. Davis, Surf. Sci. 256, 354 (1991).
63. Z. Zhang, Y. Gao, A.C. Arjunan, E.Y. Toupitsyn, P. Sadagopan, R. Kennedy, and T.S. Sudarshan, Mater. Sci. Forum 483-485, 113 (2005).
64. M. Katsuno, N. Ohtani, T. Fujimoto, and H. Yashiro, Mater. Sci. Forum 457-460, 83 (2004).
65. K. Kojima, et al., Mater. Sci. Forum 389-393, 195 (2002).
66. Z. Liliental-Weber, private communication.