Low temperature 4H-SiC epitaxial growth on 4H-SiC (112̄0) and (11̄00) faces by organometallic chemical vapor deposition

Journal of the Electrochemical Society

Volumn 149, Issue 9, 2002, Pages

  Jeong, Jae Kyeong ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BISTRIMETHYLSILYLMETHANE; ELECTRON BACKSCATTERING DIFFRACTION; EPILAYER; FULL WIDTH AT HALF-MAXIMUM;

SILICON CARBIDE;

EID: 0036747432     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1498844     Document Type: Article

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