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Volumn 264-268, Issue PART 1, 1998, Pages 469-472

Some aspects of the photoluminescence and Raman spectroscopy of (1010)- and (1120)- oriented 4H and 6H silicon carbide

Author keywords

a Axis; Photoluminescence; Raman Scattering

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

EID: 0031648296     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.469     Document Type: Article
Times cited : (3)

References (6)
  • 2
    • 3743131864 scopus 로고    scopus 로고
    • C. Hallin, A. Elisson, I.G. Ivanov, A. Henry, N.T. Son, and E. Janzén, this conference proceedings
    • C. Hallin, A. Elisson, I.G. Ivanov, A. Henry, N.T. Son, and E. Janzén, this conference proceedings.
  • 4
    • 85086679762 scopus 로고    scopus 로고
    • Heraklion, Crete (Greece), Oct. 6 to 9, Elsevier, Oxford, to be published
    • st Europ. Conf. Silicon Carbide and Related Materials, ECSCRM'96, Heraklion, Crete (Greece), Oct. 6 to 9, 1996, Elsevier, Oxford, to be published; see also 9634. A. Henry, I.G. Ivanov, T. Egilsson, C. Hallin, A. Ellison, O. Kordina, U. Lindefelt and E. Janzén, ibid.
    • (1996) st Europ. Conf. Silicon Carbide and Related Materials, ECSCRM'96
    • Choyke, W.J.1    Devaty, R.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.