Behavior of background impurities in thick 4H-SiC epitaxial layers

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 242-246

  Kakanakova Georgieva, A ^a   Yakimova, R ^a   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

4H SiC; Cathodoluminescence; Cohesive energy; Residual impurities; Sublimation epitaxy; Ta (Hf) environment

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; GRAPHITE; HAFNIUM; IMAGING TECHNIQUES; SPECTROSCOPIC ANALYSIS; SUBLIMATION; TANTALUM;

DIATOMIC MOLECULES;

SILICON CARBIDE;

EID: 0035852188     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00495-0     Document Type: Article

References (9)

1. Electric structure and properties of solids