CVD growth and characterization of 4H-SiC epitaxial film on (112̄0) as-cut substrates

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 113-116

  Zhang, Zehong ^a   Gao, Ying ^a   Arjunan, Arul C ^a   Toupitsyn, Eugene Y ^a   Sadagopan, Priyamvada ^a   Kennedy, Robert ^a   Sudarshan, Tangali S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

(112 0); AFM; Chemical vapor deposition; EBIC; KOH etching; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; EPILAYERS; ETCHING; GROWTH RATE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

ELECTRON BEAM INDUCED CURRENT (EBIC); EPILAYER SURFACES; KOH ETCHING; SCHOTTKY DIODES;

EPITAXIAL FILMS;

EID: 34249060322     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.113     Document Type: Conference Paper

References (8)

1. M. Bakowski, P. Ericsson, C. Harris, S. Karlsson, S. Savage and A. Schoner, Compound Semiconductor, Vol. 6 (2000), p. 75.
2. Y. Tanaka, N. Kobayashi, H. Okumura, R. Suzuki, T. Ohdaira, M. Hasegawa, M. Ogura, S. Yoshida and H. Tanoue, Mater. Sci. Forum, Vol. 338-342 (2000), p. 909.
3. R. Rupp and I. Zverev, Mater. Sci. Forum, Vol. 353-356 (2001), p. 727.
4. Z.Y. Chen, T. Kimoto and H. Matsunami, Jpn. J. Appl. Phys. Vol. 38, (1999), p. 1375.
5. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara, Mater. Sci. Forum, Vol. 338-342 (2000), p. 1105.
6. S. Ha, W.M. Vetter, M. Dudley and M. Skowronski, Mater. Sci. Forum, Vol. 389-393 (2002), p. 443.
7. Y. Gao, Z. Zhang, R. Bondokov, S. Soloviev and T. Sudarshan, Mat. Res. Soc. Symp. Proc. Vol. 815 (2004),p.J5.20.
8. S. Ha, K. Hu, M. Skowronski, J.J. Sumakeris, M.J. Paisley and M.K. Das, Appl. Phys. Lett., Vol. 84 (2004), p. 5267.