Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (1 1 2̄ 0)

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 83-89

  Bishop, S M ^a   Park, J S ^a   Gu, J ^b   Wagner, B P ^a   Reitmeier, Z J ^a   Batchelor, D A ^c   Zakharov, D N ^d   Liliental Weber, Z ^d   Davis, R F ^a  

^a North Carolina State University   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Atomic force microscopy; A1. Crystal morphology; A1. Surfaces; A3. Metalorganic chemical vapor deposition; A3. Pendeo epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SEMICONDUCTOR MATERIALS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTAL MORPHOLOGY; PENDEO-EPITAXY; SEMICONDUCTING III-V MATERIALS; STRANSKI-KRASTANOV MODE;

THIN FILMS;

EID: 33847292782     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.207     Document Type: Article

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