Atomic structure of non-basal-plane SiC surfaces: Hydrogen etching and surface phase transformations

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 271-282

  Soubatch, Serguei ^a   Lee, Wai Y ^a   Hetzel, Martin ^a   Virojanadara, Chariya ^a   Coletti, Camilla ^b   Saddow, Stephen E ^b   Starke, Ulrich ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ETCHING; LOW ENERGY ELECTRON DIFFRACTION; PHASE TRANSITIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC STRUCTURE; HYDROGEN ETCHING; ISOMORPHIC ORIENTATIONS;

SILICON CARBIDE;

EID: 33750359650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b07-01     Document Type: Conference Paper

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