Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3315-3319

  Kimoto, T ^a   Zhi Ying Chen, ^a   Tamura, S ^a   Nakamura, S I ^a   Onojima, N ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AFM; Chemical vapor deposition; Morphological defect; Silicon carbide; Step bunching; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DEFECTS; EPITAXIAL GROWTH; MOLECULAR STRUCTURE; OPTICAL MICROSCOPY; OPTIMIZATION; SUBSTRATES; SURFACE ROUGHNESS;

SURFACE DEFECT DENSITY;

SILICON CARBIDE;

EID: 0035328673     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3315     Document Type: Article

References (23)