Lattice parameter measurements of 3C-SiC thin films grown on 6H-SiC(0001) substrate crystals

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 319-322

  Krausslich J ^a   Bauer, A ^a   Wunderlich, B ^a   Goetz, K ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION; STRAIN; STRESSES; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION; INTERPLANAR SPACING; RECIPROCAL SPACE MAPS; SILICON CARBIDE SUBSTRATE CRYSTALS; SILICON CARBIDE THIN FILMS; X RAY REFLECTION;

SILICON CARBIDE;

EID: 14344269805     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.319     Document Type: Article

References (6)

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