Epitaxial growth of (112̄0) 4H-SiC using substrate grown in the [112̄0] direction

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 195-198

  Kojima, K ^a,b,c   Ohno, T ^a,c   Senzaki, J ^a,b   Fukuda, K ^a,b   Fujimoto, T ^a,c   Katsuno, M ^a,c   Ohtani, N ^a,c   Nishino, J ^a,c   Masahara, K ^a,c   Ishida, Y ^a,b   Takahashi, T ^a,b   Suzuki, T ^a,c   Tanaka, T ^a,c   Yoshida, S ^a,b   Arai, K ^a,b  

^a Ultra Low Loss Power Device Technology Research Body UPR   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c R&D Association for Future Electron Devices   (Japan)

Author keywords

(112 0) plane; 4H SiC; Homoepitaxial growth; KOH etching; Stacking faults

Indexed keywords

EPILAYERS; MEASUREMENT THEORY; SILICON CARBIDE; STACKING FAULTS; SUBLIMATION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ETCHING; INTERFACE STATES; MORPHOLOGY; POTASSIUM HYDROXIDE; SCHOTTKY BARRIER DIODES; SURFACE MORPHOLOGY;

HOMOEPITAXIAL GROWTH; KOH ETCHING; (1120) PLANE; 4H-SIC; INTERFACE STATE DENSITY; IV CHARACTERISTICS; SUBLIMATION METHODS; X-RAY DIFFRACTION MEASUREMENTS;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 4243923995     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.195     Document Type: Article

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