A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices

Journal of Physics D: Applied Physics

Volumn 40, Issue 8, 2007, Pages 2247-2257

  Bapat, Ameya ^a   Gatti, Marco ^a   Ding, Yong Ping ^a   Campbell, Stephen A ^a   Kortshagen, Uwe ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOELECTRONICS; NANOPARTICLES; PLASMA APPLICATIONS; PLASMA DENSITY; SILICON; SYNTHESIS (CHEMICAL);

LOW PRESSURE PLASMA; PARTICLE EXTRACTION; SEMICONDUCTOR PROCESSING; SILICON NANOCRYSTALS;

NANOCRYSTALS;

EID: 34249106176     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/8/S03     Document Type: Article

References (80)

1. Spears K G, Robinson T J and Roth R M 1986 IEEE Trans. Plasma Sci. 14 179
2. Roth R M, Spears K G, Stein G D and Wong G 1985 Appl. Phys. Lett. 46 253
3. Selwyn G S, Singh J and Bennet R S 1989 J. Vac. Sci. Technol. A 7 2758
4. Selwyn G S, Heidenreich J E and Haller H L 1990 Appl. Phys. Lett. 57 1876
5. Graves D B and Jellum G M 1990 J. Appl. Phys. 67 6490
6. Perrin J, Böhm C, Etemadi R and Lloret A 1994 Plasma Sources Sci. Technol. 3 253
7. Perrin J, Lloret A, Rosny G d and Schmitt J P M 1984 Int. J. Mass Spectrom. Ion Process. 57 249
8. Boufendi L and Bouchoule A 1994 Plasma Sources Sci. Technol. 3 263
9. Boufendi L, Hermann J, Bouchoule A, Dubreuil B, Stoffels E, Stoffels W W and Giorgi M L d 1994 J. Appl. Phys. 76 148
10. Bouchoule A and Boufendi L 1993 Plasma Sources Sci. Technol. 2 204
11. Boufendi L, Bouchoule A, Porteous R K, Blondeau J P, Plain A and Laure C 1993 J. Appl. Phys. 73 2160
12. Boufendi L, Plain A, Bloundeau J P, Bouchoule A, Laure C and Toogood M 1992 Appl. Phys. Lett. 60 169
13. Hollenstein C 2000 Plasma Phys. Control. Fusion 42 R93
14. Courteille C, Dorier J-L, Dutta J, Hollenstein C and Howling A A 1995 J. Appl. Phys. 78 61
15. Howling A A, Sansonnens L, Dorier J - and Hollenstein C 1994 J. Appl. Phys. 75 1340
16. Howling A A, Dorier J - and Hollenstein C 1993 Appl. Phys. Lett. 62 1341
17. Howling A A, Sansonnens L, Dorier J - and Hollenstein C 1993 J. Phys. D: Appl. Phys. 26 1003
18. Stoffels E, Stoffels W W, Kroesen G M W and Hoog F J d 1996 J. Vac. Sci. Technol. A 14 556
19. Stoffels W W, Stoffels E, Kroesen G M W and Hoog F J d 1996 J. Vac. Sci. Technol. A 14 588
20. Stoffels W W, Stoffels E, Kroesen G M W and Hoog F J d 1993 J. Appl. Phys. 74 2959
21. Shiratani M, Kishigaki N, Kawasaki H, Fukuzawa T and Watanabe Y 1996 IEEE Trans. Plasma Sci. 24 99
22. Kawasaki H, Fukuzawa T, Tsuruoka H, Yoshioka T, Shiratani M and Watanabe Y 1994 Japan. J. Appl. Phys. 33 4198
23. Watanabe Y, Shiratani M, Fukuzawa T and Kawasaki H 1994 Plasma Sources Sci. Technol. 3 355
24. Watanabe Y and Shiratani M 1993 Japan. J. Appl. Phys. 32 3074
25. Shiratani M, Yamashita M, Tsuruoka H and Watanabe Y 1992 Proc. Japan. Symp. Plasma Chem. 5 93
26. Gallagher A, Howling A A and Hollenstein C 2002 J. Appl. Phys. 91 5571
27. Childs M A and Gallagher A 2000 J. Appl. Phys. 87 1076
28. Childs M A and Gallagher A 2000 J. Appl. Phys. 87 1086
29. Gallagher A 2000 Phys Rev E. 62 2690
30. Tanenbaum D M, Laracuente A L and Gallagher A 1996 Appl. Phys. Lett. 68 1705
31. Kim K-S, Kim D-J, Yoon J-H, Park J Y, Watanabe Y and Shiratani M 2003 J. Colloid Interface Sci. 257 195
32. Kim K-S and Kim D-J 2000 J. Appl. Phys. 87 2691
33. Kim K-S and Ikegawa M 1996 Plasma Sources Sci. Technol. 5 311
34. Schweigert V A and Schweigert I V 1996 J. Phys. D: Appl. Phys. 29 655
35. Kortshagen U and Bhandarkar U 1999 Phys Rev E 60 887
36. Kortshagen U R, Bhandarkar U V, Girshick S L and Swihart M T 1999 Pure & Appl. Chem. 71 1871
37. Bhandarkar U, Kortshagen U and Girshick S L 2003 J. Phys. D: Appl. Phys. 36 1399
38. Bhandarkar U V, Swihart M T, Girshick S L and Kortshagen U R 2000 J. Phys. D: Appl. Phys. 33 2731
39. De Bleecker K, Bogaerts A, Gijbels R and Goedheer W 2004 Phys. Rev. E 69 056409
40. De Bleecker K, Bogaerts A and Goedheer W 2004 Phys. Rev. E 70 056407
41. Bouchoule A 1999 Dusty Plasmas (New York: Wiley)
42. Butte R, Vignoli S, Meaudre M, Meaudre R, Marty O, Saviot L and Cabarrocas P R I 2000 J. Non-Cryst. Solids 266 263
43. Butte R, Meaudre R, Meaudre M, Vignoli S, Longeaud C, Kleider J P and Cabarrocas P R 1999 Phil. Magn. B 79 1079
44. Oda S and Otobe M 1995 Mater. Res. Soc. Symp. Proc. 358 721
45. Otobe M, Kanai T, Ifuku T, Yajima H and Oda S 1996 J. Non-Cryst. Solids 198-200 875
46. Oda S 1997 Adv. Colloid Interface. Sci. 71-72 31
47. Oda S 2003 Mater. Sci. Eng. B 101 19
48. Nishiguchi K and Oda S 2000 J. Appl. Phys. 88 4186
49. Fu Y, Willander M, Dutta A and Oda S 2000 Superlattices and Microstruct. 28 177
50. Banerjee S, Huang S, Yamanaka T and Oda S 2002 J. Vac. Sci. Technol. B 20 1135
51. Hinds B J, Yamanaka T and Oda S 2001 J. Appl. Phys. 90 6402
52. Nishiguchi K, Zhao X and Oda S 2002 J. Appl. Phys. 92 2748
53. Mangolini L, Thimsen E and Kortshagen U 2005 Nano Lett. 5 655
54. Sankaran R M, Holunga D, Flagan R C and Giapis K P 2005 Nano Lett. 5 537
55. Jurbergs D, Mangolini L, Rogojina E and Kortshagen U 2006 Appl. Phys. Lett. 88 233116
56. Bapat A, Perrey C R, Campbell S A, Carter C B and Kortshagen U 2003 J. Appl. Phys. 94 1969
57. Bapat A, Anderson C, Perrey C R, Carter C B, Campbell S A and Kortshagen U 2004 Plasma Phys. Control. Fusion 46 B97-B109
58. Goree J 1994 Plasma Sources Sci. Technol. 3 400
59. Matsoukas T and Russel M 1995 J. Appl. Phys. 77 4285
60. Matsoukas T 1997 J. Colloid Interface Sci. 187 474
61. Selwyn G S, Haller K L and Patterson E F 1993 J. Vac. Sci. Technol. A 11 1132
62. Carlile R N, Geha S, O'Hanlon J F and Stewart J C 1991 Appl. Phys. Lett. 59 1167
63. Fridman A A, Boufendi L, Hbid T, Potapkin B V and Bouchoule A 1996 J. Appl. Phys. 79 1303
64. Ding Y, Dong Y, Bapat A, Nowak J, Carter C B, Kortshagen U R and Campbell S A 2006 IEEE Trans. Electron Device 53 2525
65. Stekolnikov A A, Furthmüller J and Bechstedt F 2002 Phys. Rev. B 65 115318
66. Barnard A and Zapol P 2004 J. Chem. Phys. 121 4276
67. Barry C R, Steward M G, Lwin N Z and Jacobs H O 2003 Nanotechnology 14 1057
68. Friedlander S K 2000 Smoke, Dust, and Haze-Fundamentals of Aerosol Dynamcis (Oxford: Oxford University Press)
69. Bouchoule A and Boufendi L 1994 Plasma Sources Sci. Technol. 3 262-7
70. Stoffels E, Stoffels W W, Kroesen G M W and Hoog F J d 1996 J. Vac. Sci. Technol. A 14 556
71. Lieberman M A and Lichtenberg A J 1994 Principles of Plasma Discharges and Materials Processing (New York: Wiley Interscience) pp 368-70
72. St Braithwaite N, Booth J P and Cunge G 1996 Plasma Sources Sci. Technol. 5 677
73. Booth J P, St Braithwaite N, Goodyear A and Barroy P 2000 Rev. Sci. Instrum. 71 2722
74. Fontcuberta i Morral A and Roca i Cabarrocas P 2001 Thin Solid Films 383 161
75. Hwang H H and Kushner M J 1996 Appl. Phys. Lett. 68 3716
76. Thompson S, Perrey C R, Carter C B, Belich T J, Kakalios J and Kortshagen U 2005 J. Appl. Phys. 97 034310
77. Bapat A P 2004 Low pressure plasma synthesis of crystalline silicon nanoparticles Master Thesis University of Minnesota
78. Baines M J, Williams I P and Asebiomo A S 1965 Mon. Not. R. Astron. Soc. 130 63-74
79. Bittencourt J A 1986 Fundamentals of Plasma Physics (Oxford: Pergamon)
80. Whipple E C, Northrop T G and Mendis D A 1985 J. Geophy. Res. 90 7405