Nanocrystalline silicon formation in a SiH4 plasma cell

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 875-878

  Otobe, Masanori ^a   Kanai, Tomonori ^a   Ifuku, Toru ^a   Yajima, Hiroshi ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEPOSITION; FABRICATION; GRAIN SIZE AND SHAPE; HYDRIDES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMAS; SILANES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

DEPOSITION RATE; DILUTION; PLASMA CELL; ULTRAHIGH VACUUM CHAMBER;

SEMICONDUCTING SILICON;

EID: 17344392339     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00161-5     Document Type: Article

References (7)

1. S. Oda and M. Otobe, Mater. Res. Soc. Symp. Proc. 358 (1995) 721, and other papers therein.
2. M. Otobe, T. Kanai, and S. Oda, Mater. Res. Soc. Symp. Proc. 377 (1995) 51.
3. Y. Watanabe and M. Shiratani, Plasma Sources Sci. Technol. 3 (1994) 286.
4. A. Kono, N. Koike, K. Okuda, and T. Goto, Jpn. J. Appl. Phys. 32 (1993) L543.
5. M. Volmer and A. Weber, Z. Phys. Chem. 119 (1926) 277.
6. A.E. Nielsen, Kinetics of Precipitation (Pergamon, Oxford, 1964).
7. M. Otobe, unpublished.