Some electronic and metastability properties of a new nanostructured material: Hydrogenated polymorphous silicon

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 79, Issue 7, 1999, Pages 1079-1095

  Butte R ^a   Meaudre, R ^a   Meaudre, M ^a   Vignoli, S ^a   Longeaud, C ^b   Kleider, J P ^b   Roca I Cabarrocas, P ^c  

^a UNIVERSITÉ LYON 1   (France)

^b UNIV PARIS SUD   (France)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

POLYMORPHOUS SILICON;

AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC PROPERTIES; ELECTROOPTICAL EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; REACTION KINETICS; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 0032638847     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642819908214860     Document Type: Article

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