Carrier conduction in a Si-nanocrystal-based single-electron transistor-I. Effect of gate bias

Superlattices and Microstructures

Volumn 28, Issue 3, 2000, Pages 177-187

  Fu, Y ^a   Dutta, A ^b   Willander, M ^a   Oda, S ^b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); GROUND STATE; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON;

CARRIER CONDUCTION; COULOMB CHARGING EFFECT; COULOMB DIAMOND; GATE BIAS EFFECT; GATE VOLTAGE OSCILLATION; NANOCRYSTAL INTERACTION; QUANTUM CONFINEMENT EFFECT; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 0343878768     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0911     Document Type: Article

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