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Volumn 33, Issue 21, 2000, Pages 2731-2746

Modelling of silicon hydride clustering in a low-pressure silane plasma

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISSOCIATION; ELECTRIC DISCHARGES; MATHEMATICAL MODELS; NEGATIVE IONS; NUCLEATION; PLASMAS;

EID: 0034324652     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/21/311     Document Type: Article
Times cited : (126)

References (50)
  • 1
    • 0003552056 scopus 로고    scopus 로고
    • The national technology roadmap for semiconductors
    • unpublished
    • Semiconductor Industry Association 1997 The National Technology Roadmap for Semiconductors Technical Report (unpublished) see http://notes.sematech.org/ NTRS/PubINTRS.nsf/pages/97pelec.htm/
    • (1997) Technical Report
  • 5
    • 0031681570 scopus 로고    scopus 로고
    • Surface controlled nanoscale materials for the high-added-value applications
    • Warrendale, PA: Materials Research Society
    • Somasundaran P and Chen T 1998 Surface controlled nanoscale materials for the high-added-value applications Mater. Res. Soc. (Warrendale, PA: Materials Research Society) pp 161-72
    • (1998) Mater. Res. Soc. , pp. 161-172
    • Somasundaran, P.1    Chen, T.2
  • 39
    • 0342623836 scopus 로고    scopus 로고
    • Personal communications
    • Bordage M C 1997 Personal communications
    • (1997)
    • Bordage, M.C.1
  • 42
    • 0034238651 scopus 로고    scopus 로고
    • A model of particle growth in silane discharges
    • Gallagher A 2000 A model of particle growth in silane discharges Phys. Rev. E 62 2960-706
    • (2000) Phys. Rev. E , vol.62 , pp. 2960-3706
    • Gallagher, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.