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Volumn 62, Issue 2, 2000, Pages 2690-2706

Model of particle growth in silane discharges

Author keywords

[No Author keywords available]

Indexed keywords

ANION; CATION; ELECTRODE GAP; PLASMA CHEMISTRY;

EID: 0034238651     PISSN: 1063651X     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevE.62.2690     Document Type: Article
Times cited : (69)

References (34)
  • 4
    • 0000866684 scopus 로고    scopus 로고
    • The reported film growth rate G should be increased by a factor of 4/2.6=1.54. Film growth was measured with interference fringes; each represents a thickness increase of λ/2 n, where n is the film index of refraction. This correction results from reducing n to 2.6 from the originally assumed value of 4.0. The 4.0 value is typical for films deposited at 240 C, whereas we recently measured 2.6 for films deposited at 22 C, as in Ref. 3
    • M. A. Childs and A. Gallagher, J. Appl. Phys. 87, 1076 (2000).The reported film growth rate G should be increased by a factor of 4/2.6=1.54. Film growth was measured with interference fringes; each represents a thickness increase of λ/2 n, where n is the film index of refraction. This correction results from reducing n to 2.6 from the originally assumed value of 4.0. The 4.0 value is typical for films deposited at 240 C, whereas we recently measured 2.6 for films deposited at 22 C, as in Ref. 3.
    • (2000) J. Appl. Phys. , vol.87 , pp. 1076
    • Childs, M.A.1    Gallagher, A.2
  • 15
    • 85036157566 scopus 로고    scopus 로고
    • Wm. C. Hinds, Aerosol Technology (Wiley, New York, 1982)
    • Wm. C. Hinds, Aerosol Technology (Wiley, New York, 1982).
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.