Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2126-2132

  Ban, D ^a   Sargent, E H ^a   Dixon Warren, St J ^b   Grevatt, T ^b   Knight, G ^b   Pakulski, G ^b   SpringThorpe, A J ^b   Streater, R ^b   White, J K ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THYRISTORS;

BURIED HETEROSTRUCTURE LASERS; DOPANT CONCENTRATION; SCANNING CAPACITANCE MICROSCOPY; SCANNING SPREADING RESISTANCE MICROSCOPY; TWO DIMENSIONAL PROFILING;

SEMICONDUCTOR LASERS;

EID: 0036026395     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1511211     Document Type: Article

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