First European GaN-based violet laser diode

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 177-182

  Bader, S ^a   Hahn, B ^a   Lugauer, H J ^a   Lell, A ^a   Weimar, A ^a   Bruderl G ^a   Baur, J ^a   Eisert, D ^a   Scheubeck, M ^a   Heppel, S ^b   Hangleiter, A ^b   Harle V ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; THERMAL EFFECTS;

GALLIUM INDIUM NITRIDE MULTIPLE QUANTUM WELL LASERS; OPTICAL WAVE; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0034230153     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<177::AID-PSSA177>3.0.CO;2-F     Document Type: Article

References (5)

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5. JIN-KUO HO et al., Appl. Phys. Lett. 74, 1275 (1999).