Cross-sectional potential imaging of compound semiconductor heterostructure by Kelvin probe force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1522-1526

  Usunami, Takao ^a   Arakawa, Masashi ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a   Kagawa, Toshiaki ^b   Iwamura, Hidetoshi ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Amplitude of alternating voltage; Cleaved surface; Cross sectional potential image; Kelvin probe force microscopy; Spatial resolution

Indexed keywords

EID: 0000639057     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1522     Document Type: Article

References (8)

1. M. Nonnenmacher, M. P. O'Boyle and H. K. Wickramasinghe: Appl. Phys. Lett. 58 (1991) 2921.
2. M. Nonnenmacher, M. P. O'Boyle and H. K. Wickramasinghe: Ultramicroscopy 42-44 (1992) 268.
3. O. Vatel and M. Tanimoto: J. Appl. Phys. 77 (1995) 2358.
4. A. K. Henning and T. Hochwitz: J.Appl. Phys. 77 (1995) 1888.
5. M. Tanimoto and O. Vatel: J. Vac. Sci. & Technol. B 14 (1996) 1547.
6. T. Mizutani, M. Arakawa and S. Kishimoto: Tech. Dig., Int. Electron Device Meet., San Francisco 1996 (1996) p. 31.
7. Seiko Instruments: SPI 3700/SPA 300.
8. M. Arakawa, S. Kishimoto and T. Mizutani: Jpn. J. Appl. Phys. 36 (1997) 1826.