GaN-based LEDs and lasers on SiC

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 5-13

  Harle V ^a   Hahn, B ^a   Lugauer, H J ^a   Bader, S ^a   Bruderl G ^a   Baur, J ^a   Eisert, D ^a   Strauss, U ^a   Zehnder, U ^a   Lell, A ^a   Hiller, N ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRONICS PACKAGING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SILICON CARBIDE;

GALLIUM NITRIDE; LOW COST CHIP TECHNOLOGY;

LIGHT EMITTING DIODES;

EID: 0037603843     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180     Document Type: Article

References (4)

1. S. NAKAMURA and G. FASOL, The Blue Laser Diode, Springer-Verlag, Berlin 1997.
2. Strategies Unlimited, March 1997.
3. A. SOHMER, J. OFF, H. BOLAY, V. HÄRLE, V. SYGANOW, J.S. IM, V. WAGNER, F. ADLER, A. HANGLEITER, A. DÖRNEN, F. SCHOLZ, D. BRUNNER, O. AMBACHER, and H. LAKNER, MRS Internet J. Nitride Semicond. Res. 2, 14 (1997).
4. R.J. SHUL et al., MRS Internet J. Nitride Semicond. Res. 4S1, G8.1 (1999).