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Volumn 87, Issue 4, 2000, Pages 1937-1942

Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001440403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372116     Document Type: Article
Times cited : (30)

References (22)
  • 9
    • 85037503103 scopus 로고    scopus 로고
    • Digital Instruments, Veeco Metrology Group, Santa Barbara, CA. Nanoscope, MultiMode, LiftMode, and TappingMode are registered trademarks of Digital Instruments, Veeco Metrology Group
    • Digital Instruments, Veeco Metrology Group, Santa Barbara, CA. Nanoscope, MultiMode, LiftMode, and TappingMode are registered trademarks of Digital Instruments, Veeco Metrology Group.
  • 17
    • 0030685335 scopus 로고    scopus 로고
    • edited by P. C. Andricacos, S. G. Corcoran, J.-L. Delplancke, and T. P. Moffat Materials Research Society, Pittsburgh, PA
    • J. L. Ebel, T. E. Schlesinger, and M. L. Reed, in Electrochemical Synthesis and Modification of Materials Symposia, edited by P. C. Andricacos, S. G. Corcoran, J.-L. Delplancke, and T. P. Moffat (Materials Research Society, Pittsburgh, PA, 1997), Vol. 451, p. 251.
    • (1997) Electrochemical Synthesis and Modification of Materials Symposia , vol.451 , pp. 251
    • Ebel, J.L.1    Schlesinger, T.E.2    Reed, M.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.