Patterning capability of new molecular resist in EUV lithography

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1049-1053

  Oizumi, Hiroaki ^a,b   Tanaka, Yuusuke ^a   Kumise, Takaaki ^a   Shiono, Daiju ^c   Hirayama, Taku ^c   Hada, Hideo ^c   Onodera, Junichi ^c   Yamaguchi, Atsuko ^d   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c TOKYO OHKA KOGYO CO LTD   (Japan)

^d HITACHI LTD   (Japan)

Author keywords

EUV Lithography (EUVL); Line edge roughness (LER); Molecular resist; Polyphenol

Indexed keywords

ASPECT RATIO; OPTICAL RESOLVING POWER; ORGANIC POLYMERS; SURFACE ROUGHNESS;

LINE EDGE ROUGHNESS (LER); MOLECULAR RESISTS; POLYPHENOLS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 34247622865     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.052     Document Type: Article

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