Overcoming pattern collapse on e-beam and EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Jouve, A ^a   Simon, J ^a   Pikon, A ^b   Solak, H ^c   Vannuffel, C ^a   Tortai, J H ^d  

^a CEA GRENOBLE   (France)

^b ROHM AND HAAS COMPANY   (United States)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d Université Joseph Fourier   (France)

Author keywords

Adhesion; Chemically Amplified resist; Elastic; Elastoplastic; Electron Beam Lithography; EUV Lithography; Pattern collapse

Indexed keywords

CHEMICALLY AMPLIFIED RESISTS (CARS); ELASTIC; ELASTOPLASTIC; EUV LITHOGRAPHY; PATTERN COLLAPSE;

ADHESION; ELASTICITY; ELASTOPLASTICITY; PATTERN MATCHING; PHYSICAL PROPERTIES; ULTRAVIOLET RADIATION;

ELECTRON BEAM LITHOGRAPHY;

EID: 33745584129     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656400     Document Type: Conference Paper

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