Characterization of line-edge roughness in resist patterns and estimation of its effect on device performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 I, Issue , 2003, Pages 689-697

  Yamaguchi, Atsuko ^a   Tsuchiya, Ryuta ^a   Fukuda, Hiroshi ^a   Komuro, Osamu ^b   Kawada, Hiroki ^b   Iizumi, Takashi ^b  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

CD SEM; Device performance; Line edge roughness; Measurement parameter

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; IMAGE PROCESSING; MOSFET DEVICES; NUMERICAL ANALYSIS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

LINE EDGE ROUGHNESS; RESIST PATTERNS; SPATIAL FREQUENCY DISTRIBUTIONS;

PHOTORESISTS;

EID: 0141608680     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483519     Document Type: Conference Paper

References (6)

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4. T. Linton, et al., Technical Digest of IEDM 2002, 12.1(2002)
5. J.A. Croon, et al., Technical Digest of IEDM 2002, 12.2(2002)
6. A. Yamaguchi and O. Komuro, submitted to Jpn. J. Appl. Phys.