Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 3, 2003, Pages 1019-1026

  Constantoudis, V ^a   Patsis, G P ^a   Tserepi, A ^a   Gogolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

FRACTALS; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

LINE EDGE ROUGHNESS (LER);

PHOTORESISTS;

EID: 0038457081     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1570844     Document Type: Review

References (29)

1. A.-L. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth, 1st ed. (Cambridge University Press, Cambridge, England, 1995).
2. B. Y. Zhao, G.-C. Wang, and T.-M. Lu, Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications, Experimental Methods in the Physical Sciences (Academic, New York, 2001), Vol. 32.
3. B. B. Mandelbrot, The Fractal Geometry of Nature, 1st ed. (Freeman, New York, 1982).
4. B. B. Mandelbrot, D. E. Passoja, and A. J. Paullay, Nature (London) 308, 71 (1984).
5. P. Pfeifer, Appl. Surf. Sci. 18, 146 (1984).
6. M. Matsushita and S. Ouchi, Physica D 38, 246 (1989).
7. S. Talibuddin and J. P. Runt, J. Appl. Phys. 76, 5070 (1994).
8. J. G. Moreira, J. Kamphorst, Leal da Silva, and S. Oliffson Kamphorst, J. Phys. A 27, 8079 (1994).
9. M. V. H. Rao, B. K. Mathur, and K. L. Chopra, Appl. Phys. Lett. 65, 124 (1994).
10. J. Schmittbuhl and J-P. Vilotte, Phys. Rev. E 51, 131 (1995).
11. J. Deng, Y. F. He, F. Ye, Q. Y. Long, and C. W. Lung, J. Phys. D 32, L45 (1999).
12. C. Castelnovo, A. Podesta, P. Piseri, and P. Milani, Phys. Rev. E 65, 021601 (2002).
13. B. Dubuc, J. F. Quiniou, C. Roques-Carmes, C. Tricot, and S. W. Zucker, Phys. Rev. A 39, 1500 (1989).
14. S. Miller and R. Reifenberger, J. Vac. Sci. Technol. B 10, 1203 (1992).
15. L. Spanos and E. A. Irene, J. Vac, Sci. Technol. B 12, 2646 (1994).
16. V. Constantoudis, E. Gogolides, G. P. Patsis, A. Tserepi, and E. S. Valamontes, J. Vac. Sci. Technol. B 19, 2694 (2001).
17. V. Constantoudis, E. Gogolides, A. Tserepi, C. D. Diakoumakos, and E. S. Valamontes, Microelectron. Eng. 61-62, 793 (2002).
18. T. Yoshinobu, A. Iwamoto, and H. Iwasaki, Jpn. J. Appl. Phys., Part 1 33, 383 (1994).
19. M. W. Mitchell and D. A. Bonnell, J. Mater. Res. 5, 2244 (1990).
20. P. Dumas, B. Bouffakhreddine, C. Amra, O. Vatel, E. Andre, R. Galindo, and F. Salvan, Europhys. Lett. 22, 717 (1993).
21. X. Zianni and P. N. Butcher, J. Phys.: Condens. Matter 6, 2713 (1994).
22. J. H. Oh, Y. H. Lee, B. K. Ju, D. K. Shin, C. Y. Park, and M. H. Oh, J. Appl. Phys. 82, 6203 (1997).
23. G. Palasantzas and J. Barnas, Phys. Rev. B 56, 7726 (1997).
24. A. Pirovano, A. Lacaita, G. Ghidini, and G. Tallarida, IEEE Electron Device Lett. 21, 34 (2000).
25. S. Kaya, A. R. Brown, A. Asenov, D. Magot, and T. Linton, in Proceedings of the SISPAD, edited by D. Tsoukalas and C. Tsamis (Springer, Seattle, 2001), pp. 78-81.
26. G. Palasantzas and J. Th. De Hosson, J. Appl. Phys. 89, 6130 (2001).
27. The fluctuations in the Fourier transform can also be reduced by using the integrated Fourier (or power) spectrum (see Refs. 7 and 19).
28. S. Winkelmeier, M. Sarstedt, M. Ereken, M. Goethals, and K. Ronse, Microelectron. Eng. 57-58, 665 (2001).
29. International Technology Roadmap for Semiconductors 2002 Update, Lithography Wafer Metrology Technology Requirements, p. 137, Table 98a (International SEMATECH, 2002).