Creation of low-molecular-weight organic resist for nanometer lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue II, 2001, Pages 891-902

  Kadota, T ^a   Yoshiiwa, M ^a   Kageyama, H ^a   Wakaya, F ^a   Gamo, K ^a   Shirota, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHROMATOGRAPHIC ANALYSIS; CRYSTALLIZATION; ELECTRON BEAMS; IONIZATION; LIGHT POLARIZATION; NANOTECHNOLOGY; NUCLEAR MAGNETIC RESONANCE; ORGANIC COATINGS; SCANNING ELECTRON MICROSCOPY; SILICA GEL; SPIN COATING;

MOLECULAR RESISTS;

PHOTORESISTS;

EID: 0034764021     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436812     Document Type: Conference Paper

References (25)

1. Chemical amplification in the design of dry developing resist materials
2. Poly(p-tert-butoxycarbonyloxystyrene): A convenient precursor to p-hydroxystyrene resins
3. Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer
4. A new single-layer resist for 193-nm lithography
5. Prospect and challenges of ArF excimer laser lithography processes and materials
6. Synthesis of cycloolefin-maleic anhydride alternating copolymers for 193nm imaging
7. Alicyclic polymers for 193 nm resist applications: Lithography evaluation
8. Lithographic imaging techniques for the formation of nanoscopic features
9. Novel design of carbon-rich polymers for 193 nm microlithography: Adamantane-containg cyclopolymers
10. Dendrimers with thermally labile end groups: An alternative approach to chemically amplified resist materials designed for sub-100 nm lithography
11. Pushing the limit of lithography
12. Synthesis of new alternating copolymers of n-vinylcarbazole and their application as resist materials
13. A new negative deep UV resist based on an alternating copolymer - Onium salt system. Synthesis and property of a 1:1 alternating copolymer of N-vinylcarbazole with ethyl glycidyl fumarate
14. Electron-beam resist properties of new 1:1 alternating copolymers of N-vinylcarbazole with allyl glycidyl fumarate
15. Molecular scale E-beam resist development simulation for pattern fluctuation analysis
16. Nano edge roughness in polymer resist patterns
17. Correlation of nano edge roughness in resist patterns with base polymers
18. Nanometer-scale imaging characteristics of novolak resin-based chemical amplification negative resist systems and molecular weight distribution effects of the resin matrix
19. Resolution-limit study of chain-structure negative resist by electron beam lithography
20. Organic materials for electronic and optoelectronic devices
21. 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene as a novel electron-beam positive resist for nanometer lithography
22. Novel class of low molecular-weight organic resists for nanometer lithography
23. A novel low molecular-weight organic resist with high sensitivity for nanometer lithography
24. Amorphous molecular materials: Development of a novel positive electron-beam molecular resist
25. Amorphous molecular materials: Development of a novel negative electron-beam molecular resist