First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AIGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 324-333

  Mohammed, Fitih M ^b   Wang, Liang ^b   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCES; THERMALLY STABLE OHMIC CONTACTS;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; OHMIC CONTACTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 34047189299     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2437161     Document Type: Article

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