Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti/Al/Mo/Au metallizations on AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Mohammed, Fitih M ^a   Wang, Liang ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NON-NITRIDE REACTIONS; OHMIC CONTACT FORMATION; SCHOTTKY BARRIER CONTACT FORMATION; SILICIDE FORMATION REACTIONS;

ALUMINUM NITRIDE; GOLD; HETEROJUNCTIONS; NITRIDES; OHMIC CONTACTS; SILICON; TITANIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

METALLIZING;

EID: 29744453320     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149968     Document Type: Article

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