AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 670-672

  Gillespie, J ^a   Crespo, A ^a   Fitch, R ^a   Jessen, G ^a   Via, G ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

AlGaN GaN; GaN; Ohmic

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

ALGAN/GAN; CONTACT RESISTANCE; METAL STACKS; SCHOTTKY CONTACTS;

OHMIC CONTACTS;

EID: 13644264177     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.12.011     Document Type: Article

References (5)

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