The role of barrier layer on Ohmic performance of Ti/Al-based contact metallizations on AlGaN/GaN heterostructures

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Mohammed, Fitih M ^b   Wang, Liang ^b   Adesida, Ilesanmi ^b   Piner, Eddie ^a  

^a NITRONEX CORPORATION   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; OHMIC PERFORMANCE; TI/AL-BASED CONTACT METALLIZATIONS;

ANNEALING; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLIZING; MULTILAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS;

TITANIUM ALLOYS;

EID: 33746839187     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218766     Document Type: Article

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