Low-resistance ohmic contacts to AlGaN/GaN heterostructure using Si/Ti/Al/Cu/Au multilayer metal scheme

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3955-3956

  Youn, Chang Joo ^a   Kang, Kwang Yong ^b  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Al Ti Si N intermetallic phase layer; AlGaN gaN heterostructure; Ohmic contact; Si diffusion

Indexed keywords

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MULTILAYERS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

HETEROJUNCTIONS;

EID: 0034215580     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3955     Document Type: Article

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