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Journal of Electronic Materials

Volumn 35, Issue 3, 2006, Pages 406-410

Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures

(6) Cha, H O Young a Chen, X b Wu, H b Schaff, W J b Spencer, M G b Eastman, L F b

a GE GLOBAL RESEARCH (United States)

b School of Operations Research and Industrial Engineering (United States)

Author keywords

AlGaN GaN heterostructures; Ohmic contacts; Silicide

Indexed keywords

BARRIER HEIGHT; CONTACT TRANSFER RESISTANCE; NANO INTERLAYER; SPECIFIC CONTACT RESISTIVITY; THERMIONIC EMISSION CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MORPHOLOGY; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON COMPOUNDS; SURFACES; THERMIONIC EMISSION;

OHMIC CONTACTS;

EID: 33645574972 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02690526 Document Type: Article

Times cited : (9)

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