Low-contact-resistance and smooth-surface Ti/Al/Nb/Au ohmic electrode on AlGaN/GaN heterostructure

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3775-3776

  Nakayama, T ^a   Miyamoto, H ^a   Ando, Y ^a   Okamoto, Y ^a   Inoue, T ^a   Hataya, K ^a   Kuzuhara, M ^a  

^a R and D Assoc Fut Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTIVITY; GOLD; HEAT TREATMENT; HETEROJUNCTIONS; NIOBIUM; RAPID THERMAL ANNEALING; SURFACE ROUGHNESS;

BAND GAP; LOW-CONTACT-RESISTANCE; OHMIC ELECTRODES; POLARIZATION EFFECTS;

TITANIUM;

EID: 9744280432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810210     Document Type: Article

References (5)

1. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, IEEE Electron Device Lett. 23, 455 (2002).
2. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Tokoyama, N. Adachi, and M. Takikawa, 2003 IEDM Technical Digest (Washington, DC, 8-10 December, 2003), pp. 983.
3. S. A. Vitusevich, S. V. Danylyuk, N. Klein, M. V. Petrychuk, V. N. Sokolov, V. A. Kochelap, A. E. Belyaev, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Appl. Phys. Lett. 80, 2126 (2002).
4. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 92, 1712 (2002).
5. A. N. Bright, P J. Thomas, M. Weyland, D. M. Tricker, C. J. Humphreys, and R. Davies, J. Appl. Phys. 89, 3143 (2001).