Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2635-2639

  Kang, B S ^a   Kim, S ^a   La Roche, J R ^a   Ren, F ^a   Fitch, R C ^b   Gillespie, J K ^b   Moser, N ^b   Jenkins, I ^b   Sewell, J ^b   Via, D ^b   Crespo, A ^b   Dabiran, A M ^c   Chow, P P ^c   Osinsky, A ^c   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT MORPHOLOGY; CONTACT RESISTANCE; DRAIN CURRENT-VOLTAGE (I-V) CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT);

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; METALLIZING; NICKEL; OHMIC CONTACTS; STABILITY; THRESHOLD VOLTAGE;

IRIDIUM;

EID: 19944431694     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1814111     Document Type: Article

References (34)

1. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. K. Mishra, Electron. Lett. 40, 73 (2004).
2. Y.-R Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh (unpublished).
3. J. Sun, H. Fatima, A. Koudymov, A. Chitnis, X. Hu, H.-M. Wang, J. Zhang, G. Simin, J. Yang, and M. A. Khan, IEEE Electron Device Lett. 24, 375 (2003).
4. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 92, 1712 (2002).
5. A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. Noor Mohammad, J. Appl. Phys. 93, 1087 (2003).
6. J. Burm, K. Chu, W. A. Davis, W. J. Schaff, L. F. Eastman, and T. J. Eustis, Appl. Phys. Lett. 70, 464 (1997).
7. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoç, Appl. Phys. Lett. 64, 1003 (1994).
8. B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang, Appl. Phys. Lett. 70, 57 (1997).
9. Z. Fan, S. Noor Mohammad, W. Kim, Ö. Aktas, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 68, 1672 (1996).
10. S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, Appl. Phys. Lett. 73, 2582 (1998).
11. A. N. Bright, P. J. Thomas, M. Weyland, D. M. Tricker, C. J. Humphreys, and R. Davies, J. Appl. Phys. 89, 3143 (2001).
12. N. A. Papanicolaou, M. V. Rao, J. Mittereder, and W. T. Anderson, J. Vac. Sci. Technol. B 19, 261 (2001).
13. Q. Z. Liu and S. S. Lau, Solid-State Electron. 42, 677 (1998).
14. R. Li, S. J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, and J. M. Redwing, IEEE Electron Device Lett. 20, 323 (1999).
15. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, IEEE Electron Device Lett. 20, 161 (1999).
16. D. Qiao, Z. F. Guan, J. Carlton, S. S. Lau, and G. J. Sullivan, Appl. Phys. Lett. 74, 2652 (1999).
17. V. Tilak, R. Dimitov, M. Murphy, B. Green, J. Smart, W. J. Schaft, J. R. Shealy, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 622, T7.4.1 (2000).
18. S.-H. Lim, J. Washburn, Z. Liliental-Weber, and D. Qiao, Appl. Phys. Lett. 78, 3797 (2001).
19. M. Asif Khan, M. S. Shur, and Q. Chen, Appl. Phys. Lett. 68, 3022 (1996).
20. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 80, 2934 (2002).
21. C. Lu, H. Chen, X. Lv, X. Xie, and S. Noor Mohammad, J. Appl. Phys. 91, 9218 (2002).
22. J. S. Foresi and T. D. Moustakus, Appl. Phys. Lett. 62, 2859 (1993).
23. M. W. Fay, G. Moldovan, P. D. Brown, I. Harrison, J. C. Birbeck, B. T. Hughes, M. J. Uren, and T. Martin, J. Appl. Phys. 92, 94 (2002).
24. K. O. Schweitz, P. K. Wang, S. E. Mohney, and D. Gotthold, Appl. Phys. Lett. 80, 1954 (2002).
25. M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, and Y. Lu, J. Appl. Phys. 80, 278 (1996).
26. A. Zeitouny, M. Eizenberg, S. J. Pearton, and F. Ren, J. Appl. Phys. 88, 2048 (2000).
27. B. Luo, F. Ren, R.C. Fitch, J.K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.G. Baca, R.D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, and S. J. Pearton, Appl. Phys. Lett. 82, 3910 (2003).
28. H.W. Jang and J.-L. Lee, J. Appl. Phys. 93, 5416 (2003).
29. R.C. Fitch, J.K. Gillespie, N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.M. Dabiran, P.P. Chow, A. Osinsky, J.R. LaRoche, F. Ren, and S.J. Pearton, Appl. Phys. Lett. 84, 1495 (2004).
30. R.C. Fitch, J.K. Gillespie, N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.M. Dabiran, P.P. Chow, A. Osinsky, J.R. LaRoche, F. Ren, and S.J. Pearton, J. Vac. Sci. Technol. B 22, 619 (2004).
31. D. Selvanathan, L. Zhou, V. Kumar, I. Adesida, and N. Fnnegan, J. Electron. Mater. 32, 335 (2003).
32. K. H. Baik, Y. Irokawa, F. Ren, S. J. Pearton, S. S. Park, and Y. J. Park, Solid-State Electron. 47, 1533 (2003).
33. M. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).
34. M.S. Shur, Physics of Semiconductor Devices (Prentice-Hall, Englewod Cliffs, NJ, 1990).