Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on Al/GaN/GaN HEMTs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2330-2335

  Mohammed, Fitih M ^a   Wang, Liang ^a   Selvanathan, Deepak ^a   Hu, Hubert ^a   Adesida, Ilesanmi ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; FORMATION MECHANISM; INTERFACIAL COMPOUNDS;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; ELECTRON MOBILITY; HEAT TREATMENT; MICROSTRUCTURE; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 29044440928     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2101691     Document Type: Article

References (18)

1. M. Asif Khan, M. S. Shur, and Q. Chen, Appl. Phys. Lett. 68, 3022 (1996).
2. A. P. Zhang, G. T. Dang, F. Ren, J. M. Van Hove, J. J. Klaassen, P. P. Chow, X. A. Cao, and S. J. Pearton, J. Vac. Sci. Technol. A 18, 1149 (2000).
3. H. W. Jang, C. M. Jeon, J. K. Kim, and J. -L. Lee, Appl. Phys. Lett. 78, 2015 (2001).
4. J. Yan, M. J. Kappers, A. Crossley, C. McAleese, W. A. Phillips, and C. J. Humphreys, Phys. Status Solidi C 1, 2820 (2004).
5. A. Motayed, M. Jah, A. Sharma, W. T. Anderson, Cole W. Litton, and S. Noor Mohammad, J. Vac. Sci. Technol. B 22, 663 (2004).
6. Y. -J. Lin, H. -Y. Lee, F. -T. Hwang, and C. -T. Lee, J. Electron. Mater. 30, 532 (2001).
7. C. M. Jeon, H. W. Jang, K. J. Choi, S. -B. Bae, J. -H. Lee, and J. -L. Lee, Solid-State Electron. 46, 695 (2002).
8. K. O. Schweitz and S. E. Mohney, J. Electron. Mater. 30, 175 (2001).
9. D. Selvanathan, F. M. Mohammed, A. Tesfayesus, and I. Adesida, J. Vac. Sci. Technol. B 22, 2409 (2004).
10. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 0021-8979 10.1063/1.1491584 92, 1712 (2002); D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A. L. Johnson, J. F. Schetzina, and I. Adesida, Electron. Lett. 0013-5194 10.1049/el:20020500 38, 755 (2002); D. Selvanathan, L. Zhou, V. Kumar, N. Finnegan, and I. Adesida, J. Electron. Mater. 32, 335 (2003).
11. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 0021-8979 10.1063/1.1491584 92, 1712 (2002); D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A. L. Johnson, J. F. Schetzina, and I. Adesida, Electron. Lett. 0013-5194 10.1049/el:20020500 38, 755 (2002); D. Selvanathan, L. Zhou, V. Kumar, N. Finnegan, and I. Adesida, J. Electron. Mater. 32, 335 (2003).
12. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 0021-8979 10.1063/1.1491584 92, 1712 (2002); D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A. L. Johnson, J. F. Schetzina, and I. Adesida, Electron. Lett. 0013-5194 10.1049/el:20020500 38, 755 (2002); D. Selvanathan, L. Zhou, V. Kumar, N. Finnegan, and I. Adesida, J. Electron. Mater. 32, 335 (2003).
13. J. Gillespie, A. Crespo, R. Fitch, G. Jessen, and G. Via, Solid-State Electron. 49, 670 (2005).
14. D. Qiao, L. Jia, L. S. Yu, P. M. Asbeck, S. -H. Lim, Z. Liliental-Weber, T. E. Haynes, J. B. Barner, and S. S. Lau, J. Appl. Phys. 89, 5543 (2001).
15. S. -H. Lim, J. Washburn, Z. Liliental-Weber, and D. Qiao, Appl. Phys. Lett. 78, 3797 (2001).
16. K. H. Kim, C. M. Jeon, S. H. Oh, J. -L. Lee, C. G. Park, J. H. Lee, K. S. Lee, and Y. M. Koo, J. Vac. Sci. Technol. B 23, 322 (2005).
17. A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998).
18. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 1003 (1994).