Miniband-related 1.4-1.8 μm luminescence of Ge/Si quantum dot superlattices

Nanoscale Research Letters

Volumn 1, Issue 2, 2006, Pages 137-153

  Talalaev, V G ^a,b,c   Cirlin, G E ^a,d   Tonkikh, A A ^a,d   Zakharov, N D ^a   Werner, P ^a   Gosele U ^a   Tomm, J W ^b   Elsaesser, T ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MAX BORN INSTITUT   (Germany)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846871514     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-006-9004-x     Document Type: Article

References (94)

1. S. Satpathy, R.M. Martin, C.G. Van de Walle, Phys. Rev. B 38, 13237 (1988)
2. R.J. Turton, M. Jaros, Mat. Sci. Eng. B 7, 37 (1990)
3. R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel, Phys. Rev. Lett. 64, 1055 (1990)
4. H. Presting, H. Kibbel, M. Jaros, R.M. Turton, U. Menczigar, G. Abstreiter, H.G. Grimmeiss, Semicond. Sci. Technol. 7, 1127 (1992)
5. S. Ghosh, J. Weber, H. Presting, Phys. Rev. B 61, 15625 (2000)
6. S. Fukatsu, H. Akiyama, Y. Shiraki, H. Sakaki, J. Cryst. Growth, 157, 1 (1995)
7. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller, Science 290, 2277 (2000)
8. H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki, J. Cryst. Growth, 157, 265 (1995)
9. K. Eberl, O.G. Schmidt, R. Duschl, O. Kienzle, E. Ernst, Y. Rau, Thin Solid Films, 369, 33 (2000)
10. T. Brunhes, P. Boucaud, S. Sauvage, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, I. Sagnes, Appl. Phys. Lett. 77, 1822 (2000)
11. L. Vescan, O. Chretien, T. Stoica, E. Mateeva, A. Muck, Mater. Sci. Semicond. Proc. 3, 383 (2000)
12. M. Stoffel, U. Denker, O.G. Schmidt (2003) Appl. Phys. Lett. 82, 3236 (2003)
13. W.-H. Chang, A.T. Chou, W.Y. Chen, H.S. Chang, T.M. Hsu, Z. Pei, P.S. Chen, S.W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai, Appl. Phys. Lett. 83, 2958 (2003)
14. M.M. Rieger, P. Vogl, Phys. Rev. B 48, 14276 (1993)
15. A.I. Yakimov, N.P. Stepina, A.V. Dvurechenskii, A.I. Nikiforov, A.V. Nenashev, Semicond. Sci. Technol. 15, 1125 (2000)
16. G. Cirlin, V. Egorov, V. Talalaev, P. Werner, N. Zakharov, USA Patent Application, No 10/723.285 (2003)
17. P.H. Tan, D. Bougeard, G. Abstreiter, K. Brunner, Appl. Phys. Lett. 84, 2632 (2004)
18. R. Schorer, G. Abstreiter, S. de Gironcoli, E. Molinari, H. Kibbel, H. Presting, Phys. Rev. B 49, 5406 (1994)
19. A.G. Milekhin, A.I. Nikiforov, O.P. Pchelyakov, S. Schulze, D.R.T. Zahn, JETP Lett. 73, 461 (2001)
20. S.H. Kwok, P.Y. Yu, C.H. Tung, Y.H. Zhang, M.F. Li, C.S. Peng, J.M. Zhou, Phys. Rev. B 59, 4980 (1999)
21. J.L. Liu, G. Jin, Y.S. Tang, Y.H. Luo, K.L. Wang, Appl. Phys. Lett. 76, 586 (2000)
22. V.I. Alonso, K. Winer, Phys. Rev. B 39, 10056 (1989)
23. W. Schröter, H. Cerva, Solid State Phenom. 85-86, 67 (2002)
24. V.V. Kveder, E.A. Steinman, S.A. Shevchenko, H.G. Grimmeiss, Phys. Rev. B 51, 10520 (1995)
25. N.D. Zakharov, V.G. Talalaev, P. Werner, A.A. Tonkikh, G.E. Cirlin, Appl. Phys. Lett. 83, 3084 (2003)
26. W.-H. Chang, W.-Y. Chen, A.-T. Chou, T.-M. Hsu, P.-S. Chen, Z. Pei, L.-S. Lai, J. Appl. Phys. 93, 4999 (2003)
27. S. Fukatsu, H. Sunamura, Y. Shiraki, S. Komiyama, Appl. Phys. Lett. 71, 258 (1997)
28. P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A.A. Darhuber, G. Bauer, A.O. Kosogov, P. Werner, J. Vac. Sci. Technol. B 16, 1575 (1998)
29. O.G. Schmidt, O. Kienzle, Y. Hao, K. Eberl, F. Ernst, Appl. Phys. Lett. 74, 1272 (1999)
30. L. Vescan, Mater. Sci. Eng. A 302, 6 (2001)
31. R. Loo, P. Meunier-Beillard, D. Vanhaeren, H. Bender, M. Caymax, W. Vandervorst, D. Dentel, M. Goryll, L. Vescan. J. Appl. Phys. 90, 2565 (2001)
32. A.V. Novikov, D.N. Lobanov, A.N. Yablonsky, Y.N. Drozdov, N.V. Vostokov, Z.F. Krasilnik, Physica E 16, 467 (2003)
33. D.I. Lubyshev, P.P. González-Borrero, E. Marega Jr., E. Petitprez, N. La Scala Jr., P. Basmaji, Appl. Phys. Lett. 68, 205 (1996)
34. C. Lobo, R. Leon, S. Marcinkevicius, W. Yang, P.C. Sercel, X.Z. Liao, J. Zou, D.J.H. Cockayne, Phys. Rev. B 60, 16647 (1999)
35. V.G. Talalaev, B.V. Novikov, M.A. Smirnov, V.V. Kachkanov, G. Gobsch, R. Goldhahn, A. Winzer, G.E. Cirlin, V.A. Egorov, V.M. Ustinov, Nanotechnology 13, 143 (2002)
36. A.V. Dvurechenskii, A.I. Yakimov, Semiconductors 35, 1143 (2001)
37. J. Wan, Y.H. Luo, Z.M. Jiang, G. Jin, J.L. Liu, K.L. Wang, X.Z. Liao, J. Zou, Appl. Phys. Lett. 79, 1980 (2001)
38. V.V. Kveder, E.A. Steinman, S.A. Shevchenko, H.G. Grimmeiss, Phys. Rev. B 51, 10520 (1995)
39. W. Schrter, H. Cerva, Solid State Phenom. 85-86, 67 (2002)
40. Discussion with V.V. Kveder and M. Seibt. Institute of Physics, Georg-August-University Göttingen, 25 November 2004
41. G.E. Cirlin, V.G. Talalaev, N.D. Zakharov, V.A. Egorov, P. Werner, Phys. Stat. Sol. (b) 232, R1 (2002)
42. G. Cirlin, A. Tonkikh, V. Talalaev, N. Zakharov, P. Werner, in Proceedings of SPIE, 5946 "Optical Materials and Applications", 266, 2005
43. V.G. Talalaev, G.E. Cirlin, A.A. Tonkikh, N.D. Zakharov, P. Werner, Phys. Stat. Sol. (a) 198, R4 (2003)
44. L. Vescan, T. Stoica, O. Chretien, M. Goryll, E. Mateeva, A. Mück, J. Appl. Phys. 87, 7275 (2000)
45. T.C. Ong, K.W. Terrill, S. Tam, C. Hu, IEEE Elec. Dev. Lett. 4, 460 (1983)
46. E.Ö. Sveinbjörnsson, J. Weber, Appl. Phys. Lett. 69, 2686 (1996)
47. V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt, W. Schröter, Appl. Phys. Lett. 84, 2106 (2004)
48. C.S. Peng, Q. Huang, W.Q. Cheng, J.M. Zhou, Y.H. Zhang, T.T. Sheng, C.H. Tung. Appl. Phys. Lett. 72, 2541 (1998)
49. J. Engvall, J. Olajos, H.G. Grimmeiss, H. Presting, H. Kibbel, E. Kasper, Appl. Phys. Lett. 63, 491 (1993)
50. H. Presting, T. Zinke, O. Brux, M. Gail, G. Abstreiter, H. Kibbel, M. Jaros, J. Cryst. Growth 157, 15 (1995)
51. E. Kasper, Surf. Sci. 174, 630 (1986)
52. A.A. Tonkikh, V.G. Talalaev, N.D. Zakharov, G.E. Cirlin, V.M. Ustinov, P. Werner, Tech. Phys. Lett. 29, 739 (2003)
53. O.G. Scmidt, K. Eberl, Y. Rau, Phys. Rev. B 62, 16715 (2000)
54. V.A. Egorov, G.E. Cirlin, A.A. Tonkikh, V.G. Talalaev, A.G. Makarov, N.N. Ledentsov, V.M. Ustinov, N.D. Zakharov, P. Werner, Phys. Solid State 46, 49 (2004)
55. G.E. Cirlin, A.A. Tonkikh, V.E. Ptitsyn, V.G. Dubrovskii, S.A. Masalov, V.P. Evtikhiev, D.V. Denisov, V.M. Ustinov, P. Werner, Phys. Solid State 47, 58 (2005)
56. F. Guffarth, R. Heitz, A. Schliwa, K. Pötschke, D. Bimberg, Physica E 21, 326 (2004)
57. H.T. Grahn (ed.), Semiconductor Superlattices, Growth and Electronic Properties (World Scientific, Singapore, 1995)
58. A. Sibille, C. Minot, F. Laruelle, Int. J. Mod. Phys. B 14, 909 (2000)
59. A. Wacker, Phys. Rep. 357, 1 (2002)
60. L. Esaki, R. Tsu, IBM J. Res. Dev. 14, 61 (1970)
61. R.F. Kazarinov, R.A. Suris, Semiconductors 6, 120 (1972)
62. R. Tsu, L. Esaki, Appl. Phys. Lett. 22, 562 (1973)
63. R. Tsu, G. Döhler, Phys. Rev. B 12, 680 (1975)
64. L.L. Chang, L. Esaki, R. Tsu, Appl. Phys. Lett. 24, 593 (1974)
65. L. Esaki, L.L. Chang, Phys. Rev. Lett. 33, 495 (1974)
66. M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, Appl. Phys. Lett. 74, 564 (1999)
67. G.S. Solomon, J.A. Trezza, A.F. Marshall, J.S. Harris, Jr., Phys. Rev. Lett. 76, 952 (1996)
68. B. Ilahi, L. Sfaxi, F. Hassen, L. Bouzaiene, H. Maaref, B. Salem, G. Bremond, O. Marty, Phys. Stat. Sol. (a) 199, 457 (2003)
69. B.L. Liu, Z.Y. Xu, H.Y. Liu, Z.G. Wang, J. Cryst. Growth 220, 51 (2000)
70. S. Lan, K. Akahane, K.-Y. Jang, T. Kawamura, Y. Okada, M. Kawabe, T. Nishimura, O. Wada, Jpn. J. Appl. Phys. 38, 2934 (1999)
71. H.Z. Song, K. Akahane, S. Lan, H.Z. Xu, Y. Okada, M. Kawabe, Phys. Rev. B 64, 085303 (2001)
72. O.L. Lazarenkova, A.A. Balandin, J. Appl. Phys. 89, 5509 (2001)
73. Y. Bao, A.A. Balandin, J.L. Liu, J. Liu, Y.H. Xie, Appl. Phys. Lett. 84, 3355 (2004)
74. Á. Perales, L.L. Bonilla, R. Escobedo, Nanotechnology, 15, S229 (2004)
75. K. Kawashima, M. Takata, K. Fujiwara, T. Kagawa, O. Tadanaga, H. Iwamura, Microelectron. Eng. 51-52, 143 (2000)
76. Y. Shimada, N. Sekine, K. Hirakawa, Physica E 21, 661 (2004)
77. T. Takagahara, Surf. Sci. 267, 310 (1992)
78. N.V. Sibirev, V.G. Talalaev, A.A. Tonkikh, G.E. Cirlin, V.G. Dubrovskii, N.D. Zakharov, P. Werner, Semiconductors 40, 224 (2006)
79. M. Grundmann, O. Stier, D. Bimberg, Phys. Rev. B 52, 11969 (1995)
80. J. Wan, G.L. Jin, Z.M. Jiang, Y.H. Luo, J.L. Liu, K.L. Wang, Appl. Phys. Lett. 78, 1763 (2001)
81. G. Bremond, M. Serpentini, A. Souifi, G. Guillot, B. Jacquier, M. Abdallah, I. Berbezier, B. Joyce, Microelectron. J. 30, 357 (1999)
82. R. Heitz, N.N. Ledentsov, D. Bimberg, A.Y. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, N.D. Zakharov, P. Werner, U. Gösele, Appl. Phys. Lett. 74, 1701 (1999)
83. V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Gösele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov, J. Appl. Phys., 2006 (in press).
84. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, X. Xiao, Phys. Rev. B 47, 16659 (1993)
85. K. Leo, J. Shah, E.O. Göbel, J.P. Gordon, S. Schmitt-Rink, Semicond. Sci. Technol. 7, B394 (1992)
86. S. Haacke, N.T. Pelekanos, H. Mariette, M. Zigone, A.P. Heberle, W.W. Rühle, Phys. Rev. B 47, 16643 (1993)
87. E.E. Mendez, F. Agulló-Rueda, J.M. Hong, Phys. Rev. Lett. 60, 2426 (1988)
88. F. Agulló-Rueda, E.E. Mendez, J.M. Hong, Phys. Rev. B 40, 1357 (1989)
89. J. Bleuse, G. Bastard, P. Voisin, Phys. Rev. Lett. 60, 220 (1988)
90. A.I. Yakimov, C.J. Adkins, R. Boucher, A. V. Dvurechenskii, A.I. Nikiforov, O.P. Pchelyakov, G. Biskupski, Phys. Rev. B 59, 12598 (1999)
91. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, C.J. Adkins, Phys. Stat. Sol. (b) 218, 99 (2000)
92. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, E. Gornik, A. Wacker, Phys. Rev. Lett. 81, 3495 (1998)
93. A. Sibille, J.F. Palmier, M. Hadjazi, H. Wang, G. Etemadi, E. Dutisseuil, F. Mollot, Superlatt. Microstruct. 13, 247 (1993)
94. M. Larsson, A. Elfving, P.-O. Holtz, G.V. Hansson, W.-X. Ni, Physica E. 16, 476 (2003)