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Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 205-207

Exciton localization and temperature stability in self-organized InAs quantum dots

(6) Lubyshev, D I a Gonzalez Borrero P P a Marega Jr , E a Petitprez, E a La Scala Jr , N a Basmaji, P a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON EMISSION; ELECTRON TUNNELING; EXCITONS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ELECTRON HOLE EMISSION; EXCITON LOCALIZATION; FULL WIDTH AT HALF MAXIMUM; SELF ORGANIZED QUANTUM DOTS; THERMOACTIVATION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030574537 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.116461 Document Type: Article

Times cited : (264)

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