The Effect of Postgrowth Annealing on the Structure and Optical Properties of Multilayer Ge/Si Heterostructures

Technical Physics Letters

Volumn 29, Issue 9, 2003, Pages 739-742

  Tonkikh, A A ^a,b,c   Talalaev, V G ^c   Zakharov, N D ^c   Cirlin, G E ^a,b,c   Ustinov, V M ^b   Werner, P ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141942044     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1615551     Document Type: Article

References (7)

1. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995).
2. O. G. Schmidt, U. Denker, K. Eberl, et al., Appl. Phys. Lett. 77, 2509 (2000).
3. G. E. Cirlin, V. G. Talalaev, N. D. Zakharov, et al., Phys. Status Solidi B 232, R1 (2002).
4. G. E. Cirlin, P. Werner, U. Gösele, et al., Pis'ma Zh. Tekh. Fiz. 27 (1), 31 (2001) [Tech. Phys. Lett. 27, 14 (2001)].
5. G. E. Cirlin, P. Werner, U. Gösele, et al., Pis'ma Zh. Tekh. Fiz. 27 (1), 31 (2001) [Tech. Phys. Lett. 27, 14 (2001)].
6. V. G. Shengurov, P. Svetlov, V. Yu. Chalkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 662 (2002) [Semiconductors 36, 625 (2002)].
7. V. G. Shengurov, P. Svetlov, V. Yu. Chalkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 662 (2002) [Semiconductors 36, 625 (2002)].