SiGe nanostructures by selective epitaxy and self-assembling

Materials Science and Engineering: A

Volumn 302, Issue 1, 2001, Pages 6-13

  Vescan, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

300 K electrolumescence; Lateral ordering; Nanostructures; Selective epitaxy; Self assembling; SiGe

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; LITHOGRAPHY; OPTOELECTRONIC DEVICES; SELF ASSEMBLY; SILICON COMPOUNDS;

QUANTUM-SIZE EFFECTS;

NANOSTRUCTURED MATERIALS;

FIBER OPTICS;

EID: 0035871129     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)01346-0     Document Type: Article

References (32)

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4. Epitaxial growth-principles and applications