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Volumn 38, Issue 5 A, 1999, Pages 2934-2943
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Two-dimensional in0.4Ga0.6As/GaAs quantum dot superlattices realized by self-organized epitaxial growth
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Author keywords
Coherent and incoherent; Extended and localized states; Lateral coupling; Photoluminescence; Quantum dot superlattices; Self organized growth
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Indexed keywords
BAND STRUCTURE;
BERYLLIUM;
ELECTRON SCATTERING;
ELECTRON TRANSITIONS;
ELECTRON TUNNELING;
EPITAXIAL GROWTH;
EXCITONS;
IMPURITIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR SUPERLATTICES;
QUANTUM DOT SUPERLATTICES;
SELF ORGANIZED EPITAXIAL GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032656838
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.2934 Document Type: Article |
Times cited : (24)
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References (11)
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