Excitons in charged Ge/Si type-II quantum dots

Semiconductor Science and Technology

Volumn 15, Issue 12, 2000, Pages 1125-1130

  Yakimov, A I ^a   Stepina, N P ^a   Dvurechenskii, A V ^a   Nikiforov, A I ^a   Nenashev, A V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EXCITONS; GROUND STATE; HETEROJUNCTIONS; HOLE TRAPS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

INTERBAND EXCITIONIC TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034508031     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/12/305     Document Type: Article

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