Photocurrent spectra and Wannier-Stark localization of In0.53Ga0.47As/InP superlattices with different barrier thicknesses

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 143-150

  Kawashima, K ^a   Takata, M ^a   Fujiwara, K ^a   Kagawa, T ^b   Tadanaga, O ^b   Iwamura, H ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ABSORPTION; EXCITONS; MATHEMATICAL MODELS; NUMERICAL METHODS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTROABSORPTION; STARK LADDER TRANSITION; TRANSFER MATRIX CALCULATION; TRANSITION ENERGY; TRANSITION ENERGY FAN DIAGRAM; WANNIER-STARK LOCALIZATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033691081     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00463-3     Document Type: Article

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