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The hole mobility in (Formula presented) peaks between 70 and 100 K, depending on the relative contributions of ionized impurity scattering, polar optical phonon scattering, acoustic phonon scattering, and alloy scattering [see S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley, New York, 1992)].
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The hole mobility in (Formula presented) peaks between 70 and 100 K, depending on the relative contributions of ionized impurity scattering, polar optical phonon scattering, acoustic phonon scattering, and alloy scattering [see S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley, New York, 1992)].
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