Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots

Physics of the Solid State

Volumn 47, Issue 1, 2005, Pages 58-62

  Cirlin, G E ^a,b,c   Tonkikh, A A ^a   Ptitsyn, V E ^a   Dubrovskii V G ^b   Masalov, S A ^b   Evtikhiev, V P ^b   Denisov, D V ^b   Ustinov, V M ^b   Werner, P ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13944269601     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1853445     Document Type: Conference Paper

References (20)

1. N. V. Vostokov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, and A. N. Yablonskiǐ, Fiz. Tverd. Tela (St. Petersburg) 46, 63 (2004) [Phys. Solid State 46, 60 (2004)].
2. N. V. Vostokov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, and A. N. Yablonskiǐ, Fiz. Tverd. Tela (St. Petersburg) 46, 63 (2004) [Phys. Solid State 46, 60 (2004)].
3. N. D. Zakharov, V. G. Talalaev, P. Werner, A. A. Tonkikh, and G. E. Cirlin, Appl. Phys. Lett. 83, 3084 (2003).
4. V. N. Tondare, B. I. Birajdar, N. Pradeep, D. S. Joag, A. Lobo, and S. K. Kulkarni, Appl. Phys. Lett. 77, 2394 (2000).
5. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskiǐ, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].
6. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskiǐ, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].
7. G. E. Cirlin, N. P. Korneeva, V. N. Demidov, N. K. Polyakov, V. N. Petrov, and N. N. Ledentsov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1230 (1997) [Semiconductors 31, 1057 (1997)].
8. G. E. Cirlin, N. P. Korneeva, V. N. Demidov, N. K. Polyakov, V. N. Petrov, and N. N. Ledentsov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1230 (1997) [Semiconductors 31, 1057 (1997)].
9. I. Berbezier, A. Ronda, A. Portavoce, and N. Motta, Appl. Phys. Lett. 83, 4833 (2003).
10. A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiǐ, V. M. Ustinov, and P. Werner, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1239 (2004) [Semiconductors 38, 1202 (2004)].
11. A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiǐ, V. M. Ustinov, and P. Werner, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1239 (2004) [Semiconductors 38, 1202 (2004)].
12. V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Phys. Rev. B 68, 075409 (2003).
13. C. S. Peng, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung, Appl. Phys. Lett. 72, 2541 (1998).
14. D. Temple, Mater. Sci. Eng. R 24, 185 (1999).
15. A. Modinos, Field, Thermionic and Secondary Electron Emission Spectroscopy (Plenum, New York, 1984; Nauka, Moscow, 1990).
16. R. Fischer and H. Neumann, Fortschr. Phys. 14, 603 (1966); Autoelectronic Emission of Semiconductors (Nauka, Moscow, 1971).
17. R. Fischer and H. Neumann, Fortschr. Phys. 14, 603 (1966); Autoelectronic Emission of Semiconductors (Nauka, Moscow, 1971).
18. V. S. Fomenko, Emission Properties of Materials: Handbook (Naukova Dumka, Kiev, 1981) [in Russian].
19. M. J. Fransen, M. H. F. Overwijk, and P. Kruit, Appl. Surf. Sci. 146, 357 (1999).
20. V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, and P. Werner, Phys. Status Solidi A 198, R4 (2003).